Stacked photoelectric conversion device and method of producing the same
OwnerYoshiyuki NASUNO, Yasuaki ISHIKAWA +1inventors
InventorsYoshiyuki NASUNO, Yasuaki ISHIKAWA, Takanori NAKANO
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Abstract
A stacked photoelectric conversion device includes a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer has an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.
Claims14
A stacked photoelectric conversion device comprising a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer has an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.
A method of producing a stacked photoelectric conversion device comprising the step of forming a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers are formed so as to have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer is formed so as to have an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.
Dependencies are inferred from the claim text.