Semiconductor pressure sensor and manufacturing method thereof

A manufacturing method for a semiconductor pressure sensor at least comprising;

• a pressure-sensitive gauges disposed in the region of a diaphragm,
• a pressure-sensitive chip provided with a pressure-sensitive gauges electrode disposed outside of the region of the diaphragm, and a pressure-sensitive leads which electrically connects to the pressure-sensitive gauges and the pressure-sensitive gauges electrode,
• an insulating resin layer which is disposed on the pressure-sensitive chip providing with a first opening portion exposing the diaphragm and a second opening portion exposing a portion of the pressure-sensitive gauges,
• a conductive layer which is disposed on the insulating resin layer, and electrically connected to the pressure-sensitive gauge electrode via the second opening portion, and
• a bump disposed on the conductive layer, wherein the method comprising at least consecutive steps of;
• a step A which forms the insulating resin layer consisting of a photosensitive resin that is disposed on the pressure-sensitive chip so as to cover the pressure-sensitive gauge, pressure-sensitive gauge electrode and pressure-sensitive leads,
• a step B which forms the first opening portion exposing the diaphragm, and the second opening portion exposing a portion of the pressure-sensitive gauge electrode, on the insulating resin layer, and
• a step C which forms the conductive layer so as to be electrically connected to the pressure-sensitive gauge electrode via the second opening portion.