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US 2008/0168216 A1Published application
Memory system, multi-bit flash memory device, and associated methods
AssigneeSamsung Electronics Co., Ltd.
InventorSeung-Jae Lee
Life of this patent
Estimating the term…
Abstract
A memory system includes a multi-bit flash memory device and a flash controller configured to control the multi-bit flash memory device. The flash controller is configured to output a series of commands, pointers, and addresses to the multi-bit flash memory device for read/program operations.
Claims26
A memory system comprising:
- a multi-bit flash memory device;
- and
- a flash controller configured to control the multi-bit flash memory device,
- wherein the flash controller is configured to output a series of commands, pointers, and addresses to the multi-bit flash memory device for read/program operations.
1 more element
A multi-bit flash memory device, comprising:
- a memory cell array including memory cells arranged in rows and columns;
- a read/program circuit configured to select a row in response to a row address and perform read/program operations on memory cells of the selected row;
- and
- a control block configured to control the read/program circuit in response to a pointer and a command input to the multi-bit flash memory device,
- wherein the control block is configured to select a page in the selected row in response to the pointer, and control the read/program circuit to perform read/program operations according to a read/program sequence corresponding to the selected page.
2 more elements
A method of operating a multi-bit flash memory device and a memory system including the same, the method comprising:
- generating a series of commands, pointers, and addresses for read/program operations;
- and
- performing the read/program operations in the multi-bit flash memory device in response to the series of commands, pointers, and addresses.
Dependencies are inferred from the claim text.