High-frequency circuit, high-frequency device, and communication apparatus
AssigneeHitachi Metals, Ltd.
InventorsKeisuke FUKAMACHI, Shigeru Kemmochi, Hirotaka Satake
Life of this patent
Estimating the term…
Abstract
A high-frequency circuit comprising a switch circuit connected to an antenna terminal, first and second diplexer circuits connected to the switch circuit, first and second power amplifier circuits connected to the first diplexer circuit, first and second bandpass filter circuits connected to the first and second power amplifier circuits, a third bandpass filter circuit connected to the second diplexer circuit, a detection circuit disposed between the switch circuit and the first diplexer circuit, and a low-noise amplifier circuit disposed between the switch circuit and the second diplexer circuit.
Claims17
A high-frequency circuit for use in a dual-band wireless apparatus performing wireless communications selectively using first and second frequency bands, comprising:
- an antenna terminal connected to an antenna capable of transmitting and receiving signals in said first and second frequency bands;
- a first transmitting terminal to which a transmitting signal in said first frequency band is inputted, a second transmitting terminal to which a transmitting signal in said second frequency band is inputted, a first receiving terminal outputting a received signal in said first frequency band, and a second receiving terminal outputting a received signal in said second frequency band;
- a switch circuit for switching the connection of said antenna terminal to said first and second transmitting terminals or said first and second receiving terminals;
- a first diplexer circuit disposed between said switch circuit and said first and second transmitting terminals, and a second diplexer circuit disposed between said switch circuit and said first and second receiving terminal;
- a first power amplifier circuit disposed between said first diplexer circuit and said first transmitting terminal, and a second power amplifier circuit disposed between said first diplexer circuit and said second transmitting terminal;
- a first bandpass filter circuit disposed between said first power amplifier circuit and said first transmitting terminal, a second bandpass filter circuit disposed between said second power amplifier circuit and said second transmitting terminal, and a third bandpass filter circuit disposed between said second diplexer circuit and said first receiving terminal;
- a detection circuit disposed between said switch circuit and said first diplexer circuit;
- and
- a low-noise amplifier circuit disposed between said switch circuit and said second diplexer circuit.
A high-frequency device for use tin a dual-band wireless apparatus performing wireless communications selectively using first and second frequency bands, having a high-frequency circuit comprising:
- an antenna terminal connected to an antenna capable of transmitting and receiving signals in said first and second frequency bands;
- a first transmitting terminal to which a transmitting signal in said first frequency band is inputted, a second transmitting terminal to which a transmitting signal in said second frequency band is inputted, a first receiving terminal outputting a received signal in said first frequency band, and a second receiving terminal outputting a received signal in said second frequency band;
- a switch circuit for switching the connection of said antenna terminal to said first and second transmitting terminals or said first and second receiving terminals;
- a first diplexer circuit disposed between said switch circuit and said first and second transmitting terminals, and a second diplexer circuit disposed between said switch circuit and said first and second receiving terminals;
- a first power amplifier circuit disposed between said first diplexer circuit and said first transmitting terminal, and a second power amplifier circuit disposed between said first diplexer circuit and said second transmitting terminal;
- a first bandpass filter circuit disposed between said first power amplifier circuit and said first transmitting terminal, a second bandpass filter circuit disposed between said second power amplifier circuit and said second transmitting terminal, and a third bandpass filter circuit disposed between said second diplexer circuit and said first receiving terminal;
- a detection circuit disposed between said switch circuit and said first diplexer circuit;
- and
- a low-noise amplifier circuit disposed between said switch circuit and said second diplexer circuit;
- said high-frequency device comprising an integral laminate constituted by pluralities of dielectric ceramic layers each provided with electrode patterns, and elements mounted on a surface of said laminate, said electrode patterns constituting at least said first and second diplexer circuits and said first to third bandpass filter circuits, and said mounted elements comprising semiconductor elements for said switch circuit, said first and second power amplifier circuits and said low-noise amplifier circuit.
Dependencies are inferred from the claim text.