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US 2008/0166892 A1Published application
Mask for forming polysilicon and a method for fabricating thin film transistor using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMyung-Koo Kang, Sook-Young Kang, Hyun-Jae Kim
Life of this patent
Estimating the term…
Abstract
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask
Claims5
A method for crystallizing amorphous silicon into polysilicon, the method comprising the step of:
- illuminating a laser beam at the first area of amorphous silicon substrate through the first mask region including a plurality of the first slit patterns, wherein each of the plurality of the first slit patterns is spaced apart by the first one pitch from another and is extending in the perpendicular direction to the mask moving direction;
- moving the mask by d/4 distance, wherein the ‘d’ is the length of the mask along the moving direction;
- and
- illuminating a laser beam at the first area of amorphous silicon substrate through the second mask region including a plurality of the second slit patterns, wherein each of the plurality of the second slit patterns is spaced apart by the first one pitch from another and is extending in the same direction as the first slit patterns, wherein the first slit patterns and the second slit patterns are deviated from each other slit patterns by the first one pitch and the first one pitch is smaller than each widths of the first and the second slit patterns.
1 more element
A method for crystallizing amorphous silicon into polysilicon, the method comprising the step of:
- illuminating a laser beam at the first area of amorphous silicon substrate through the first mask region including a plurality of the first slit patterns, wherein each of the plurality of the first slit patterns is spaced apart by the first one pitch from another and is extending in the perpendicular direction to the mask moving direction;
- moving the mask by d/4 distance, wherein the ‘d’ is the length of the mask along the moving direction;
- illuminating a laser beam at the first area of amorphous silicon substrate through the second mask region including a plurality of the second slit patterns, wherein each of the plurality of the second slit patterns is spaced apart by the first one pitch from another and is extending in the same direction as the first slit patterns;
- moving the mask by d/4 distance, wherein the ‘d’ is the length of the mask along the moving direction;
- illuminating a laser beam at the first area of amorphous silicon substrate through the third mask region including a plurality of the third slit patterns, wherein each of the plurality of the third slit patterns is spaced apart by the second one pitch from another and is extending in the parallel direction to the mask moving direction;
- moving the mask by d/4 distance, wherein the ‘d’ is the length of the mask along the moving direction;
- and
- illuminating a laser beam at the first area of amorphous silicon substrate through the fourth mask region including a plurality of the fourth slit patterns, wherein each of the plurality of the fourth slit patterns is spaced apart by the second one pitch from another and is extending in the same direction as the third slit patterns;
- wherein the first slit patterns and the second slit patterns are deviated from each other slit patterns by the first one pitch and the third slit patterns and the fourth slit patterns are deviated from each other slit patterns by the second one pitch,
- wherein the first, second, third and fourth regions are defined on the mask along the mask moving direction.
7 more elements
A method for crystallizing amorphous silicon into polysilicon, the method comprising the step of:
- illuminating a laser beam at the first area of amorphous silicon substrate through the first mask region including a plurality of the first slit patterns, wherein each of the plurality of the first slit patterns is spaced apart by the first one pitch from another and is extending in the parallel direction to the mask moving direction;
- moving the mask by d/4 distance, wherein the ‘d’ is the length of the mask along the moving direction;
- illuminating a laser beam at the first area of amorphous silicon substrate through the second mask region including a plurality of the second slit patterns, wherein each of the plurality of the second slit patterns is spaced apart by the first one pitch from another and is extending in the same direction as the first slit patterns;
- moving the mask by d/4 distance, wherein the ‘d’ is the length of the mask along the moving direction;
- illuminating a laser beam at the third area of amorphous silicon substrate through the third mask region including a plurality of the third slit patterns, wherein each of the plurality of the third slit patterns is spaced apart by the second one pitch from another and is extending in the perpendicular direction to the mask moving direction;
- moving the mask by d/4 distance, wherein the ‘d’ is the length of the mask along the moving direction;
- and
- illuminating a laser beam at the first area of amorphous silicon substrate through the fourth mask region including a plurality of the fourth slit patterns, wherein each of the plurality of the fourth slit patterns is spaced apart by the second one pitch from another and is extending in the same direction as the third slit patterns;
- wherein the first slit patterns and the second slit patterns are deviated from each other slit patterns by the first one pitch and the third slit patterns and the fourth slit patterns are deviated from each other slit patterns by the second one pitch,
- wherein the first, second, third and fourth regions are defined on the mask along the mask moving direction.
7 more elements
Dependencies are inferred from the claim text.