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US 2008/0166883 A1Published application
Hemi-spherical structure and method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Chyi LIU, Chi-Hsin LO
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Abstract
Hemi-spherical structure and method for fabricating the same. A device includes discrete pillar regions on a substrate, and a pattern layer on the discrete support structures and the substrate. The pattern layer has hemi-spherical film regions on the discrete support structures respectively, and planarized portions on the substrate between the hemi-spherical film regions. Each of the hemi-spherical film regions in a position corresponding to each of the support structures serves as a hemispherical structure.
Claims10
A method of fabricating hemi-spherical structures, comprising:
- forming a first layer on a substrate;
- patterning said first layer as a plurality of support structures;
- forming a second layer on said support structures;
- and
- performing an etch-back process to shape said second layer into a plurality of hemi-spherical film regions over said support structures respectively;
- wherein, each of said hemi-spherical film regions in a position corresponding to each of said support structures serves as a hemi-spherical structure.
3 more elements
Dependencies are inferred from the claim text.