Silicon nanostructures and fabrication thereof
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Bruce D. Ulrich, Jer-Shen Maa, Sheng Teng Hsu
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Abstract
A method of fabricating silicon nanostructures includes preparing a silicon wafer as a substrate; forming an oxide layer hardmask directly on the silicon substrate; patterning and etching the oxide hardmask; wet etching the silicon wafer to remove oxide to reduce the size of the oxide hardmask and to form nanostructure elements; and dry etching, in one or more steps, the silicon wafer using the oxide hardmask to form a desired nanostructure having substantially parallel vertical sidewalls thereon.
Claims12
A method of fabricating silicon nanostructures, comprising:
- preparing a silicon wafer as a substrate;
- forming an oxide layer hardmask directly on the silicon substrate;
- patterning and etching the oxide hardmask;
- wet etching the silicon wafer to remove oxide to reduce the size of the oxide hardmask and to form nanostructure elements;
- and
- dry etching, in one or more steps, the silicon wafer using the oxide hardmask to form a desired nanostructure having substantially parallel vertical sidewalls thereon.
A method of fabricating silicon nanostructures, comprising:
- preparing a silicon wafer as a substrate;
- forming an oxide layer hardmask directly on the silicon substrate by thermal oxidation, wherein the oxide material is taken from the group of oxides consisting of SiO2, ZrO2, HfO2, Al2O3, TiO2, Ta2O5, Nb2O5, Y2O3, and La2O3;
- patterning and etching the oxide hardmask;
- wet etching the silicon wafer to remove oxide to reduce the size of the oxide hardmask and to form nanostructure elements;
- and
- dry etching, in one or more steps, the silicon wafer using the oxide hardmask to form a desired nanostructure having substantially parallel vertical sidewalls thereon.
Dependencies are inferred from the claim text.