Thermally contained/insulated phase change memory device and method (combined)
AssigneeMacronix International Co., Ltd.
InventorHsiang Lan Lung
Life of this patent
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Abstract
A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the dielectric material layer, including a phase-change layer positioned between and in electrical contact with the electrodes, wherein the lateral extent of the phase change layer is less than the lateral extent of the electrodes. An isolation material is positioned between the phase change layer and the dielectric layer, wherein the thermal conductivity of the isolation material is lower than the thermal conductivity of the dielectric material.
Claims12
A method for fabricating a memory device, comprising:
- forming a base element;
- forming a lower conductive element on the base element;
- forming a phase change element on the lower conductive element;
- forming a conductive element on the phase change element;
- forming an isolating layer surrounding the phase change and the conductive elements;
- and
- forming an upper conductive layer on the isolating layer.
Dependencies are inferred from the claim text.