Method of depositing a sculptured copper seed layer

A method of sculpturing a copper seed layer on a wafer substrate comprising a plurality of recessed device features having bottoms, sidewalls, and upper openings, the method comprising:

• (a) sputter depositing a copper seed layer on the substrate in a physical vapor deposition chamber having a biased wafer substrate support and a biased target, said depositing occurring at a first wafer bias;
• (b) sculpturing the copper seed layer by resputtering copper from the bottoms of the recessed device features to the sidewalls of the recessed device feature while simultaneously sputter depositing material from the target onto other regions of the wafer substrate, said resculpturing occurring at a second wafer bias that is substantially stronger than the first wafer bias, whereby the copper seed layer is reshaped to be substantially conformal.