Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film
AssigneesRohm Co., Ltd., Horiba, Ltd., Renesas Technology Corp., National Institute of Advanced Industrial Science and Technology
InventorsKunihiko Iwamoto, Toshihide Nabatame, Koji Tominaga, Tetsuji Yasuda
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Abstract
A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
Claims4
1-8. (canceled)
A method of manufacturing a metal compound thin film comprising:
- forming a first metal compound layer on a substrate by atomic layer deposition;
- performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer;
- and
- forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
Dependencies are inferred from the claim text.