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US 2008/0166866 A1Published application
Method for forming gate structure with local pulled-back conductive layer and its use
AssigneeProMOS Technologies Inc.
InventorCHIANG YUH REN
Life of this patent
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Abstract
A method for forming a gate structure with a pulled-back conductive layer and the use of the method are provided. The method conducts a local, not global, pull-back process on the conductive layer of the gate structure at the position intended for contact window formation, wherein the pull-back process is conducted after rapid thermal oxidation to prevent CBCB short, CB open and/or CBGC short.
Claims31
A method of forming a gate structure with a local pulled-back conductive layer, comprising the following steps:
- providing a substrate with a gate structure, wherein the gate structure has a first side wall and a second side wall and comprises the following layers from bottom to top:
- a first conductive layer,
- a second conductive layer, and
- an insulation layer;
- forming a protection layer on the first and second sidewalls of the gate structure to cover the first conductive layer and the second conductive layer;
- removing a portion of the protection layer from the first side wall to expose the second conductive layer;
- and
- performing an etching to pull-back the exposed second conductive layer.
5 more elements
A method of forming a contact window structure with a local pulled-back conductive layer, comprising the following steps:
- providing a substrate having a plurality of gate structures, wherein each of the gate structures comprises the following layers from bottom to top:
- a first conductive layer,
- a second conductive layer, and
- an insulation layer;
- forming a protection layer on a side wall of the each gate structure to cover the first conductive layer and the second conductive layer;
- removing a portion of the protection layer from each of the adjacent side walls of selected adjacent gate structures to expose the second conductive layer of each of the selected adjacent gate structures;
- performing an etching to pull-back the exposed second conductive layer;
- forming a spacer on each side of each selected adjacent gate structure, and forming a dielectric layer over the substrate and the gate structures;
- and
- removing a portion of the dielectric layer located at a position between the selected adjacent gate structures.
7 more elements
Dependencies are inferred from the claim text.