Method for forming trench gate and method for manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorHiromitsu OSHIMA
Life of this patent
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Abstract
A method for forming trench gates is provided with a step of forming gate trenches on a semiconductor substrate, and a step of forming an element isolation region on the semiconductor substrate on which the gate trenches are formed. A step of channel doping within the gate trenches is performed before the element isolation region is formed and after the gate trenches are formed. The method for forming the trench gate is further provided with a step of forming a gate oxide film on the inner wall of the gate trenches, and a step of embedding a gate electrode material within the gate trenches.
Claims9
A method for forming trench gates, comprising the steps of:
- forming gate trenches on a semiconductor substrate;
- and
- forming an element isolation region on the semiconductor substrate on which the gate trenches are formed.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming gate trenches on a semiconductor substrate;
- channel doping within the gate trenches;
- forming an element isolation region on the semiconductor substrate on which the gate trenches are formed;
- forming a gate oxide film on the inner wall of the gate trenches;
- and
- embedding a gate electrode material within the gate trenches.
Dependencies are inferred from the claim text.