Semiconductor device and manufacturing method thereof, liquid crystal television system, and el television system

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first conductive layer over a substrate;
• forming a gate insulating film over the first conductive layer;
• forming a semiconductor film over the first semiconductor film;
• forming a film with a liquid-repellent surface over the semiconductor film;
• forming first regions with liquid-attracting surfaces and a second region with a liquid-repellent surface by irradiating the film with the liquid-repellent surface with laser light;
• forming a mask pattern over the first regions with the liquid-attracting surfaces;
• and
• etching the semiconductor film and the second region with the liquid-repellent surface by using the mask pattern as a mask.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first conductive layer over a substrate;
• forming a first insulating film over the first conductive layer;
• forming a semiconductor film over the first semiconductor film;
• forming a film with a liquid-repellent surface over the semiconductor film;
• forming first regions with liquid-attracting surfaces and a second region with a liquid-repellent surface by irradiating the film with the liquid-repellent surface with laser light;
• and
• forming a second insulating film over the region with the liquid-attracting surface,
• wherein the second region with the liquid-repellent surface is formed between the first regions with the liquid-attracting surfaces, and
• wherein the second region with the liquid-repellent surface repels the second insulating film.