Integrated assist features for epitaxial growth
AssigneeFreescale Semiconductor, Inc.
InventorsOmar Zia, Nigel Cave, Venkat Kolagunta, Ruiqi Tian, Edward O. Travis
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Abstract
A method for making a semiconductor device is provided which comprises (a) creating a first mask for the epitaxial growth of features in a semiconductor device, said first mask defining a set of epitaxial tiles (219); (b) creating a second mask for defining the active region of the semiconductor device, said second mask defining a set of active tiles (229); and (c) using the first and second masks to create a semiconductor device.
Claims21
A method for making a semiconductor device, comprising:
- creating a first mask for the epitaxial growth of features in a semiconductor device, said first mask defining a set of epitaxial tiles;
- creating a second mask for defining the active region of the semiconductor device, said second mask defining a set of active tiles;
- and
- using the first and second masks to create a semiconductor device.
A method for making a semiconductor device, comprising:
- providing a semiconductor structure comprising (a) a first semiconductor layer having a first crystallographic orientation, (b) a second semiconductor layer having a second crystallographic orientation distinct from said first crystallographic orientation, and (c) an electrically insulating layer disposed between said first and second semiconductor layers;
- creating a first plurality of trenches which extend through said second semiconductor layer and said insulating layer and which expose a portion of said first semiconductor layer, thereby defining a plurality of epitaxial tiles;
- epitaxially growing said exposed portions of said first semiconductor layer;
- creating a second plurality of trenches which extend into said second semiconductor layer;
- and
- backfilling the second plurality of trenches with a first dielectric material.
A semiconductor device, comprising:
- a set of epitaxial tiles optimized for epitaxial growth;
- and
- a set of active tiles optimized for chemical mechanical polishing.
Dependencies are inferred from the claim text.