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US 2008/0166858 A1Published application
Self-constrained anisotropic germanium nanostructure from electroplating
AssigneeInternational Business Machines Corporation
InventorsGuy Cohen, Hariklia Deligianni, Qiang Huang, Lubomyr T. Romankiw
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Abstract
A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
Claims20
A nanostructure comprising
- a semiconductor substrate;
- a mask formed on the said substrate;
- an opening in said mask to expose said semiconductor substrate, wherein at least one dimension of said opening is less than 1 micron;
- a germanium structure in contact with said substrate and extending outwardly from said opening, wherein any cross section of said germanium taken parallel with said substrate mimics the shape of said opening.
1 more element
A method for forming a germanium-containing nanostructure comprising:
- forming a mask on a semiconductor substrate, wherein said mask has at least one opening to expose said substrate;
- immersing said semiconductor substrate with said mask into a plating solution containing Ge;
- applying electric power between said semiconductor substrate and an anode in said plating bath whereby said semiconductor substrate where exposed is plated with germanium;
- wherein said germanium extends outwardly from said opening in contact with said substrate and any cross section of said germanium taken parallel with said substrate mimics the shape of said opening of the said mask.
1 more element
Dependencies are inferred from the claim text.