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US 2008/0166852 A1Published application
Semiconductor element, semiconductor device, and method for fabrication thereof
AssigneeSharp Kabushiki Kaisha
InventorTakeshi Kamikawa
Life of this patent
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Abstract
A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.
Claims6
A method for fabricating a semiconductor element comprising:
- a first step of producing a processed substrate by forming, on a substrate having a nitride semiconductor layer as at least part of a surface thereof, an engraved region including at least one depressed portion and a ridge portion as a non-engraved region;
- and
- a second step of laying a nitride semiconductor layered-structure portion including at least one type of nitride semiconductor thin film both in the engraved region and on a surface of the ridge portion,
- wherein, in the second step, a first dummy-ridge portion is formed on a region of the ridge portion close to the engraved region so as to protrude from the surface of the nitride semiconductor layer above the ridge portion by making a thickness of the nitride semiconductor layered-structure portion laid on the region of the ridge portion close to the engraved region as measured from the surface of the ridge portion to a surface of the nitride semiconductor layered-structure portion greater than a thickness of the nitride semiconductor layered-structure portion laid on a semiconductor element production region, which is a region of the ridge portion other than the region thereof close to the engraved region, as measured from the surface of the ridge portion to the surface of the nitride semiconductor layered-structure portion.
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A method for fabricating a semiconductor element comprising:
- a first step of producing a processed substrate by forming, on a substrate having a nitride semiconductor layer as at least part of a surface thereof, an engraved region including at least one depressed portion and a ridge portion as a non-engraved region;
- and
- a second step of laying a nitride semiconductor layered-structure portion including at least one type of nitride semiconductor thin film both in the engraved region and on a surface of the ridge portion,
- wherein, in the first step, the engraved region is formed in a grid-like shape and adjacent ones of the engraved regions are formed parallel to and at varying intervals from one another so as to form a plurality of non-engraved regions having varying areas, and
- wherein, in the second step, a thickness, as measured from the surface of the ridge portion to the surface of the nitride semiconductor layered-structure portion, of the nitride semiconductor layered-structure portion laid on the non-engraved regions is varied according to a thickness of the surface of the ridge portion.
2 more elements
Dependencies are inferred from the claim text.