Metal-insulator-metal (mim) capacitor and method for fabricating the same
OwnerUk-Sun HONG, Sang-Rok Hah +1inventors
InventorsUk-Sun HONG, Sang-Rok Hah, Hong-Seong Son
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Abstract
The present invention discloses a metal-insulator-metal (MIM) capacitor and a method for fabricating the MIM capacitor, comprising forming a bottom insulation layer, a capacitor electrode material layer, and a hard mask material layer on a semiconductor substrate having a metal wire thereon; forming a hard mask by etching the hard mask material layer using a photosensitive mask; forming a capacitor electrode by etching the capacitor electrode material layer using the hard mask as an etching mask; and forming a top insulation layer on an entire surface of the semiconductor.
Claims9
A method of fabricating a MIM capacitor, comprising:
- sequentially forming a bottom insulation layer, a capacitor electrode material layer and a hard mask material layer on a semiconductor substrate having a metal wire thereon;
- forming a hard mask by etching the hard mask material layer using a photosensitive mask;
- forming a capacitor electrode by etching the capacitor electrode material layer using the hard mask as an etching mask;
- and
- forming a top insulation layer on an entire surface of the semiconductor substrate.
A method of fabricating a semiconductor device including a MIM capacitor, comprising:
- forming a bottom insulation layer and a capacitor electrode material layer on a semiconductor substrate having a first metal wire thereon;
- forming a hard mask on the capacitor electrode material layer;
- forming a capacitor electrode by etching the capacitor electrode material layer using the hard mask as an etching mask;
- forming a top insulation layer on an entire surface of the semiconductor substrate;
- forming an inter-layer insulation film on the entire surface of the semiconductor substrate;
- and
- forming via holes to expose the first metal wire and the capacitor electrode, respectively by etching the inter-layer insulation film, the top and bottom insulation layers, and the hard mask.
Dependencies are inferred from the claim text.