Method of forming source and drain of field-effect-transistor and structure thereof

A method of forming a field-effect-transistor (FET), comprising:

• implanting one or more dopants to create one or more implanted regions, said implanted regions covering at least regions designated for forming source and drain extensions of said FET;
• activating said implanted regions;
• creating openings for said source and drain extensions by etching, using an etchant selective to said one or more dopants, said implanted regions;
• and
• forming said source and drain extensions in said openings.

A method of forming a field-effect-transistor (FET), comprising:

• creating implanted regions designated for source and drain extensions of said FET by implanting one or more n-type dopants in regions next to a first set of spacers adjacent to a gate region of said FET;
• activating said implanted regions;
• covering said source and drain extension regions with a second set of spacers;
• removing at least said implanted regions through etching with a chlorine based etchant to create openings;
• and
• forming said source and drain extensions in said openings.