Method of fabricating a strained silicon channel metal oxide semiconductor transistor

A method of fabricating strained silicon channel complementary metal oxide semiconductor (CMOS) transistor device, the method comprising:

• providing a substrate having thereon a first active area for fabricating a first transistor and a second active area for fabricating a second transistor, and an isolation structure between the first active area and the second active area;
• forming a first gate structure on the first active area, and a second gate structure on the second active area;
• forming a mask layer on the first gate structure and the second active area;
• performing an etching process to form two recesses corresponding to the gate structure within the substrate;
• performing a selective epitaxial growth process to form a first epitaxial layer in the recesses respectively;
• performing an ion implantation process for the first epitaxial layers to form a source/drain region of the first transistor;
• and
• forming a source/drain region of the second transistor to form the second transistor.