US 2008/0166840 A1 · METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

The invention is directed to a method for manufacturing a semiconductor. The method comprises steps of providing a substrate having a gate structure formed thereon and forming a source/drain extension region in the substrate adjacent to the gate structure. A spacer is formed on the sidewall of the gate structure and a source/drain region is formed in the substrate adjacent to the spacer but away from the gate structure. A bevel carbon implantation process is performed to implant a plurality carbon atoms into the substrate and a metal silicide layer is formed on the gate structure and the source/drain region.

Claims26

Dependent claims

A method for manufacturing a semiconductor, comprising:

providing a substrate having a gate structure formed thereon;
forming a source/drain extension region in the substrate adjacent to the gate structure;
forming a spacer on the sidewall of the gate structure;
forming a source/drain region in the substrate adjacent to the spacer but away from the gate structure;
performing a bevel carbon implantation process to implant a plurality carbon atoms into the substrate;
and
forming a metal silicide layer on the gate structure and the source/drain region.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/620,970Filed 8 Jan 2007

Published

10 Jul 2008

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10P 30/204
Characterised by the semiconductor materials: into Group IV semiconductors
H10D 30/0227
Having source and drain regions or source and drain extensions self-aligned to sides of the gate: having both lightly-doped source and drain…
H10D 30/601
Insulated-gate field-effect transistors [IGFET]: having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
H10D 62/371
Of igfets: inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Method for manufacturing semiconductor device

Life of this patent

Method for manufacturing semiconductor device

Life of this patent

Abstract

Claims26