A method of manufacturing a semiconductor package, the semiconductor package comprising a first semiconductor package and at least one second semiconductor package,
- wherein the first semiconductor package comprises:
- a base plate;
- at least one semiconductor constructing body which is formed on one surface of the base plate and which includes a plurality of external connection electrodes formed on a semiconductor substrate;
- an insulating layer which is formed on said one surface of the base plate around the semiconductor constructing body;
- and
- upper interconnections each of which is formed on the insulating layer and includes at least one interconnection layer, at least some of the upper interconnections being connected to the external connection electrodes of the semiconductor constructing body and having at least one connection terminal portion;
- and
- wherein the second semiconductor package comprises:
- a base plate;
- at least one semiconductor constructing body which is formed on a first surface of the base plate and which includes a plurality of external connection electrodes formed on a semiconductor substrate,
- an insulating layer which is formed on the first surface of the base plate around the semiconductor constructing body,
- upper interconnections each of which is formed on the insulating layer and includes at least one interconnection layer, at least some of the upper interconnections being connected to the external connection electrodes of the semiconductor constructing body and having at least one connection terminal portion, and
- lower interconnections each of which is formed on a second surface of the base plate and includes at least one interconnection layer, at least some of the lower interconnections being electrically connected to the upper interconnections and having at least one connection terminal portion,
- wherein the method comprises:
- stacking the at least one second semiconductor package on the first semiconductor package;
- and
- connecting the connection terminal portions of the lower interconnections of an upper one of the stacked semiconductor packages to the connection terminal portions of the upper interconnections of the semiconductor package on below the upper semiconductor package by one of:
- a portion between the first semiconductor package and the second semiconductor package stacked thereon, and a portion between a plurality of said second semiconductor packages stacked on each other.