Method for Evaluating Semiconductor Wafer, Apparatus for Evaluating Semiconductor Wafer, and Method for Manufacturing Semiconductor Wafer

A method for evaluating nanotopography of a surface of a semiconductor wafer sliced from a semiconductor ingot, the method being conducted prior to polishing of the surface, the method at least comprising:

• measuring a surface profile of the wafer in the direction that the wafer is sliced;
• determining a maximum inclination value of warp change of the wafer surface in a sectional profile in the direction that the wafer is sliced of the measured surface profile;
• and estimating nanotopography of the wafer surface after being polished based on the determined maximum value.

An apparatus for evaluating a semiconductor wafer at least comprising:

• a surface profile measuring means for measuring a surface profile of a semiconductor wafer in a direction that the wafer is sliced;
• a data processing means for determining a maximum inclination value of warp change of the wafer surface based on data of a sectional profile in the direction that the wafer is sliced of the surface profile;
• and an evaluating means for evaluating nanotopography of the surface on a pass/fail basis by comparing the maximum inclination value of warp change with a reference value.