Semiconductor manufacturing apparatus

A semiconductor manufacturing apparatus comprising:

• impurity introduction means for introducing impurities with charges into a target film which is formed over a semiconductor substrate with an insulating film interposed therebetween;
• electron supply means for supplying the target film with electrons for neutralizing the charges contained in the impurities;
• scanning means for subjecting the target film to mechanical scanning of the impurities in two directions composed of X-Y directions or r-θ directions;
• current density measurement means for measuring the current density produced by the impurities;
• scanning speed measurement means for measuring the scanning speed v (m/s) of the target film;
• scanning speed control means for controlling the scanning speed of the target film;
• first current density control means for controlling the amount of generation of the impurities and the current density produced by the impurities;
• and
• second current density control means for controlling the current density according to the scanning speed v (m/s).

A semiconductor manufacturing apparatus comprising:

• impurity introduction means for introducing impurities with charges into a target film which is formed over a semiconductor substrate with an insulating film interposed therebetween;
• electron supply means for supplying the target film with electrons for neutralizing the charges contained in the impurities;
• first scanning means for subjecting the target film to mechanical scanning of the impurities in one direction;
• first scanning speed changing means for changing the scanning speed of the target film;
• second scanning means for allowing the impurities to perform scanning in the vertical direction with respect to one said direction;
• second scanning speed changing means for changing the scanning speed of the impurities;
• current density measurement means for measuring the current density J (A/m2) produced by the impurities;
• and
• scanning speed control means for controlling, according to the current density J (A/m2), the scanning speed of the target film and the scanning speed of the impurities.

A semiconductor manufacturing apparatus comprising:

• impurity introduction means for introducing impurities with charges into a target film which is formed over a semiconductor substrate with an insulating film interposed therebetween;
• electron supply means for supplying the target film with electrons for neutralizing the charges contained in the impurities;
• first scanning means for subjecting the target film to mechanical scanning of the impurities in one direction;
• first scanning speed measurement means for measuring the scanning speed of the target film;
• first scanning speed control means for controlling the scanning speed of the target film;
• second scanning means for allowing the impurities to perform scanning in the vertical direction with respect to one said direction;
• second scanning speed measurement means for measuring the scanning speed of the impurities;
• second scanning speed control means for controlling the scanning speed of the impurities;
• first current density control means for controlling the amount of generation of the impurities and the current density produced by the impurities;
• and
• second current density control means for controlling the impurity current density according to the relative speed v (m/s) of the impurities to the target film determined by the scanning speed of the impurities and the scanning speed of the target film.