Photoresist Composition And Method For Forming Pattern Of A Semiconductor Device
AssigneeHynix Semiconductor Inc.
InventorsJae Chang Jung, Sung Koo Lee
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Abstract
A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double patterning. The invention method can markedly reduce the number of steps in etching and hard mask deposition processes, so that work hours and manufacturing costs may be reduced, contributing to an increase in yield of semiconductor devices.
Claims16
A photoresist composition, comprising:
- a base resin, a first copolymer comprising repeating units of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent.
A method for forming a pattern of a semiconductor device, comprising the steps of:
- sequentially forming an underlying layer and a first photoresist film over a semiconductor substrate, with the underlying layer disposed between the semiconductor substrate and the first photoresist film, said first photoresist pattern being formed by a photoresist composition comprising a base resin, a first copolymer comprising repeating units of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent;
- exposing and developing the first photoresist film to form a first photoresist pattern;
- curing the first photoresist pattern;
- forming a second photoresist film over the cured first photoresist pattern;
- exposing and developing the second photoresist film to form a second photoresist pattern in a manner not overlapping the first photoresist pattern;
- and
- etching the underlying layer by using the first and second photoresist patterns as an etching mask.
Dependencies are inferred from the claim text.