Method for fabricating metal substrates with high-quality surfaces

A method for fabricating a high-quality composite metal-semiconductor substrate, comprising:

• cleaning a polished single-crystal substrate;
• depositing a semiconductor layer on the polished surface of the single-crystal substrate;
• forming a metal structure of a predetermined thickness on the thin semiconductor layer;
• and
• removing the single-crystal substrate from the thin semiconductor layer to obtain the composite metal-semiconductor substrate;
• wherein one surface of the composite metal-semiconductor substrate is a semiconductor surface.

A high-quality metal substrate, wherein the high-quality metal substrate is produced by:

• cleaning a polished single-crystal substrate;
• forming a metal structure of a predetermined thickness on a polished surface of the single-crystal substrate;
• and
• removing the single-crystal substrate from the metal structure without damaging the metal structure to obtain the high-quality metal substrate;
• and
• wherein one surface of the high-quality metal substrate preserves the smoothness and flatness of the polished surface of the single-crystal substrate.

A high-quality composite metal-semiconductor substrate, wherein the high-quality metal substrate is produced by:

• cleaning a polished single-crystal substrate;
• depositing a semiconductor layer on the polished surface of the single-crystal substrate;
• forming a metal structure of a predetermined thickness on the thin semiconductor layer;
• and
• removing the single-crystal substrate from the thin semiconductor layer to obtain the composite metal-semiconductor substrate;
• wherein one surface of the composite metal-semiconductor substrate is a semiconductor surface.