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US 2008/0166543 A1Published application
Highly conductive composition for wafer coating
OwnerQizhuo Zhuoinventor
Life of this patent
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Abstract
A conductive composition for coating a semiconductor wafer comprises conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns, a first resin that has a softening point between 80-260 ° C., solvent, curing agent, and a second resin, wherein at room temperature the first resin is substantially soluble in the solvent.
Claims7
A semiconductor device formed by bonding a semiconductor die to a substrate using a B-staged adhesive, wherein before B-staging the adhesive comprises:
- a) 66 to 80 wt % conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns,
- b) 5 to 25 wt % first resin that has a softening point between 80-260° C.,
- c) 5 to 25 wt % solvent,
- d) 0 to 5 wt % curing agent, and
- e) 0 to 20 wt % second resin,
- and wherein at room temperature the first resin is substantially soluble in the solvent.
3 more elements
A method for making a semiconductor device, comprising:
- (a) providing a semiconductor wafer having a front side that is active and a back side opposed to the front side that is inactive,
- (b) providing a conductive adhesive that comprises filler having a maximum particle size of less than 10 microns,
- (c) applying the conductive adhesive to the back side of the semiconductor wafer to form a conductive adhesive layer with an exposed side opposite the front side of the semiconductor wafer,
- (d) B-staging the conductive adhesive layer to form a B-staged wafer,
- (e) securing the exposed side of the conductive adhesive layer of the B-staged wafer to a substrate to form a semiconductor device, and
- (f) curing the semiconductor device;
- wherein after B-staging the conductive adhesive layer has a surface roughness of less than 12 microns and after cure the conductive adhesive layer has an elastic modulus of greater than 500 MPa at 250° C., a thermal conductivity at room temperature of greater than 3.8 W/mK, and a volume resistivity of less than 0.0003 ohms-cm at room temperature.
4 more elements
A semiconductor device formed by:
- (a) providing a semiconductor wafer having a front side that is active and a back side opposed to the front side that is inactive,
- (b) providing a conductive adhesive that comprises filler having a maximum particle size of less than 10 μm,
- (c) applying the conductive adhesive to the back side of the semiconductor wafer to form a conductive adhesive layer with an exposed side opposite the front side of the semiconductor wafer,
- (d) B-staging the conductive adhesive layer to form a B-staged wafer,
- (e) securing the exposed side of the conductive adhesive layer of the B-staged wafer to a substrate to form a semiconductor device, and
- (f) curing the semiconductor device;
- wherein after B-staging the conductive adhesive layer has a surface roughness of less than 12 microns and after cure the conductive adhesive layer has an elastic modulus of greater than 500 MPa at 250° C., a thermal conductivity of greater than 3.8 W/mK at room temperature, and a volume resistivity of less than 0.0003 ohms-cm at room temperature.
4 more elements
Dependencies are inferred from the claim text.