Method for Producing III-N Layers, and III-N Layers or III-N Substrates, and Devices Based Thereon

A process of epitaxial growth for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, wherein a thick III-N layer having a thickness of ≧40 μm is deposited above a foreign substrate having a misorientation between 0.1° and 2°, wherein a foreign substrate selected from sapphire, SiC, GaAs and Li(Al;

• Ga)Ox (0≦x≦3) is used as foreign substrate.

The process according to 31, wherein the foreign substrate has a misorientation in a range of 0.1° to below 1°, in particular in a range of about 0.1° up to 0.6°, preferably of about 0.3° up to about 0.6°.

A process for producing a III-N substrate, wherein III denotes at least one element of group III of the periodic table of elements, wherein onto a thin III-N layer of a template, which comprises a foreign substrate and said thin III-N layer, a III-N layer having a thickness of at least 40 μm is deposited, and wherein the foreign substrate has a slight intentional misorientation with respect to the next crystallographic lattice plane of its surface onto which the III-N layer is deposited.

A process for producing a III-N substrate, wherein III denotes at least one element of group III of the periodic table of elements, the process comprising a step in which a III-N layer having a thickness of at least 40 μm is deposited above a substrate by epitaxial growth under a predetermined N/III ratio and a predetermined reactor pressure, wherein towards the end of the epitaxial growth process for the III-N layer the N/III ratio and/or the pressure in the reactor is(are) lowered relative to the predetermined N/III ratio and/or the predetermined reactor pressure, respectively.

A substrate comprising a III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, wherein the III-N layer, at least on one side, has a surface roughness of 50 nm or below.