Method of curing porous low-k layer
AssigneeUnited Microelectronics Corp.
InventorsMei-Ling Chen, Kuo-Chih Lai, Su-Jen Sung
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Abstract
A method of curing a porous low-k layer is described, which is applied to a substrate with a porous low-k layer formed thereon, wherein the porous low-k: layer contains a porogen. A first UV-curing treatment is performed to the porous low-k layer under a relatively milder condition, and then a second UV-curing treatment is performed to the porous low-k layer under a relatively harsher condition to finish the curing of the porous low-k layer.
Claims32
A method of curing a porous low-k layer, applied to a substrate with a porous low-k layer formed thereon, wherein the porous low-k layer contains a porogen, the method comprising:
- performing a first UV-curing treatment to the porous low-k layer under a relatively milder condition;
- and
- performing a second UV-curing treatment to the porous low-k layer under a relatively harsher condition to finish the curing.
A method of curing a porous low-k layer, applied to a substrate with a porous. low-k layer formed thereon, wherein the porous low-k layer contains a porogen, the method comprising:
- performing a first curing treatment to the porous low-k layer under a relatively milder condition;
- and
- performing a second curing treatment to the porous low-k layer under a relatively harsher condition to finish the curing.
Dependencies are inferred from the claim text.