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AssigneesEizo Watanabe, Tokyo University of Agriculture and Technology, Itec, Inc.
InventorsEizo Watanabe, Toshiyuki Watanabe, Masato Sone, Yoshinori Matsuoka, Hideo Miyake, Masayasu Iida
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The present invention provides a method and an apparatus for preparing a silicon-containing solid film, which can form a thin film uniformly over a wide area. Raw-material fluid comprising a silane derivative and a hydrocarbon derivative is mixed with carrier fluid comprising carbon dioxide to form a supercritical condition. Further, an active-state is produced in the raw-material fluid of the supercritical fluid by a catalytic reaction with at least one metal catalyst selected from a group consisting of platinum, tungsten, cobalt, nickel, iron or an alloy of each of them. The fluid is blown to the substrate, thereby forming a silicon-containing solid film or a hydrocarbon-containing solid film on the substrate.
A method of preparing a thin film comprising the steps of:
An apparatus for preparing a thin film comprising an active-state production device (2) which is composed of a resistance heating element and partitions an interior area of a chamber (1) into two spaces, an inlet (4) for introducing raw-material fluid being positioned in one (3) of the spaces and a gas discharge-outlet (6) being arranged in the other (5) where a substrate (7) is disposed in the other space (5).
Dependencies are inferred from the claim text.