Transparent thin film transistor, and method of manufacturing the same

A thin film transistor (TFT) comprising:

• a substrate;
• a gate electrode disposed on the substrate;
• an active layer including a material selected from the group consisting of ZnO, InZnO, ZnSnO, and ZnInGaO and insulated from the gate electrode, the active layer comprising a channel region, a source region, and a drain region;
• a source electrode insulated from the gate electrode and electrically connected to the source region of the active layer;
• and
• a drain electrode insulated from the gate electrode and electrically connected to the drain region of the active layer,
• wherein the source region and the drain region of the active layer comprise hydrogen.

A method of manufacturing a thin film transistor (TFT), the method comprising:

• forming an active layer on a substrate using a material selected from the group consisting of ZnO, InZnO, ZnSnO, and ZnInGaO, the active layer comprising a channel region, a source region, and a drain region;
• forming a gate insulating layer to cover the active layer;
• forming a gate electrode on the gate insulating layer;
• implanting hydrogen ions on the gate insulating layer in order to inject hydrogen into the source region and the drain region of the active layer;
• and
• forming a source electrode and a drain electrode to be electrically connected to the source region and the drain region of the active layer, respectively.

A method of manufacturing a thin film transistor (TFT), the method comprising:

• forming a gate electrode on a substrate;
• forming a gate insulating layer to cover the gate electrode;
• forming an active layer comprising a channel region, a source region, and a drain region on the gate insulating layer using a material selected from the group consisting of ZnO, InZnO, ZnSnO, and ZnInGaO;
• forming an interlayer insulating layer to cover the active layer;
• implanting hydrogen ions into the interlayer insulating layer to inject hydrogen ions into the source region and the drain region of the active layer;
• and
• forming a source electrode and a drain electrode to be electrically connected to the source region and the drain region of the active layer, respectively.