Transistor circuit capable of eliminating influence of component parameter and temperature sensing apparatus using the same

A temperature sensing apparatus, comprising:

• a current-producing unit, for producing a first current and a second current;
• a first transistor;
• a switching unit, for receiving the first current and the second current to determine an emitter of the first transistor to receive the first current or the second current;
• a current-duplicating unit, for duplicating a base current of the first transistor according to a proportion and applying to the emitter of the first transistor;
• and
• a measurement unit, for measuring the voltage difference of the base and the of the first transistor as the first current flows through the emitter of the first transistor and taking the measured voltage as a first voltage, for measuring the voltage differences of the base and the emitter of the first transistor as the second current flows through the emitter of the first transistor, and taking the measured voltage as a second voltage and for calculating an ambient temperature by using the first voltage and the second voltage.

A transistor circuit, capable of eliminating influence of component parameter, comprising:

• a current-producing unit, for producing a first current and a second current;
• a first transistor, for receiving the first current;
• a second transistor, for receiving the second current;
• and
• a current-duplicating unit, for duplicating a base current of the first transistor according to a first proportion and applying to an emitter of the first transistor and for duplicating a base current of the second transistor according to a second proportion and applying to the emitter of the second transistor.

A temperature sensing apparatus, comprising:

• a current-producing unit, for producing a first current and a second current;
• a first transistor, for receiving the first current;
• a second transistor, for receiving the second current;
• a current-duplicating unit, for duplicating a base current of the first transistor according to a first proportion and applying to an emitter of the first transistor and for duplicating a base current of the second transistor according to a second proportion and applying to an emitter of the second transistor;
• and
• a measurement unit, for measuring the voltage difference of the base and the emitter of the first transistor and taking the measured voltage difference of the first transistor as a first voltage, for measuring the voltage difference of the base and the emitter of the second transistor and taking the measured voltage difference of the second transistor as a second voltage, and for calculating an ambient temperature by using the first voltage and the second voltage.