Multiwavelength quantum dot laser element
AssigneeIndustrial Technology Research Institute
InventorsKuo-Jui Lin, Kun-Fong Lin, Chih-Ming Lai
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Abstract
A multiwavelength quantum dot laser element is provided. A perpendicular stack of quantum dot active regions with different light emitting wavelengths is employed, and thickness, material composition, and quantum dot size of each of the quantum dot active regions are modulated, so as to form various laser oscillation conditions. When a current applied to the quantum dot laser element is larger than the start-oscillation current condition, lasers with different wavelengths are simultaneously obtained in each of the quantum dot active regions, thereby achieving the application of the multiwavelength quantum dot laser element.
Claims16
A multiwavelength quantum dot laser element, comprising:
- a first semiconductor layer;
- a second semiconductor layer;
- and
- an active region, disposed between the first semiconductor layer and the second semiconductor layer, having a plurality of quantum dot active regions, each of the quantum dot active regions comprising a plurality of quantum dot layers with a corresponding number of covering layers, and each of the covering layers covering each of the quantum dot layers, wherein when an applied current is larger than a start-oscillation current, the quantum dot active regions simultaneously generate a plurality of laser lights with different wavelengths.
Dependencies are inferred from the claim text.