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US 2008/0165818 A1Published application
Semiconductor optical device
AssigneeSumitomo Electric Industries, Ltd.
InventorJun-ichi Hashimoto
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Abstract
A semiconductor optical device includes an active layer made of III-V compound semiconductor containing Ga, As and N; a diffraction grating layer which is made of III-V compound semiconductor and is provided on the active layer; and a cladding layer which is made of III-V compound semiconductor and is provided on the diffraction grating layer, wherein the refractive index of the cladding layer is smaller than the refractive index of the diffraction grating layer.
Claims5
A semiconductor optical device comprising:
- an active layer made of III-V compound semiconductor containing Ga, As and N;
- a diffraction grating layer which is made of III-V compound semiconductor and is provided on the active layer;
- and
- a cladding layer which is made of III-V compound semiconductor and is provided on the diffraction grating layer,
- wherein the refractive index of the cladding layer is smaller than the refractive index of the diffraction grating layer.
2 more elements
Dependencies are inferred from the claim text.