Bi-directional resistive random access memory capable of multi-decoding and method of writing data thereto

A non-volatile memory device in which data values are determined by the polarities at both ends of a memory cell, the non-volatile memory device comprising:

• a memory cell array having a plurality of memory cells disposed in a matrix of rows and columns;
• a first decoder configured to decode a plurality of predetermined bit values of a row address associated with one of the plurality of memory cells into a first address, said first decoder disposed in a row direction of the memory cell array;
• a second decoder configured to decode bit values other than the bit values associated with the row address into a second address, said second decoder disposed in a column direction of the memory cell array;
• and
• a driver communicating with said memory cell array and configured to apply bias voltages to a word line corresponding to the first address or the second address in accordance with the data values.