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AssigneeAtmel Corporation
InventorsStefano Surico, Marco Passerini, Fabio Tassan Caser, Simone Bartoli
Estimating the term…
An erase-verify method for a NAND flash memory includes a serial double-step erase verify. A verify operation is performed on cells in the unit connected to even word lines by biasing all the even word lines at the read voltage value used in read mode, and by biasing all the odd word lines at the pass voltage value used in read mode of the selected unit. A verify operation is performed on the cells connected to odd word lines by biasing all the odd word lines at the read voltage value used in read mode and by biasing the all even word lines at the pass voltage value used in read mode of the selected unit. Verifying the odd and even word lines may be performed in either order.
An erase-verify method for a NAND flash memory including at least one string of memory cells connected to even word lines and memory cells connected to odd word lines including:
An erase-verify method for a NAND flash memory including at least one string of memory cells including a plurality of memory cells, each memory cell coupled to a word line including:
An erase-verify method for a NAND flash memory including at least one string of memory cells including a plurality of memory cells, each memory cell coupled to a word line includes sequentially performing a verify operation on a plurality of groups of memory cells in the plurality of memory cells, each group including memory cells that are not in any other group.
Dependencies are inferred from the claim text.