US 2008/0165583 A1Published application

Non-Volatile Storage Element

Assigneeaustriamicrosystems AG

InventorGregor Schatzberger

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Abstract

The invention relates to a non-volatile storage element comprising date connections (I1/O1, I2/O2) and two MOS transistors (60,70) of a first conductivity type, the source connections of the transistors being connected to a second supply voltage connection (10). A drain connection of the MOS transistor (60) is connected to the data connection (I1,O1), and a drain connection of the MOS transistor (70) is connected to the data connection (I2/O2), said MOS transistors (60, 70) being cross-coupled. The inventive storage element also comprises two cross-coupled floating gate MOS transistors (40, 50) of a second conductivity type, a drain connection of the MOS transistor (40) being connected to the data connection (I1/O1), and a drain connection of the MOS transistor (50) being connected to the data connection (I1/O1), and a drain connection of the MOS transistor (50) being connected to the data connection (I2/O2). Said storage element further comprises two MOS transistors (20, 30) of a second conductivity type, the source connections thereof being connected to a first supply connection (12), the gate connections thereof being connected to a first common switching line (14), and the well connections thereof being connected to a third common control line (5). A drain connection of the MOS transistor (20) is connected to the source connection of the MOS transistor (50), and a drain connection of the MOS transistor (30) is connected to the source connection of the MOS transistor (50).

Claims16

Dependent claims

A non-volatile storage element comprising.

a first data terminal and a second data terminal;
a first MOS transistor and a second MOS transistor, the first MOS transistor and the second MOS transistor having a first conductivity type;
the first MOS transistor and the second MOS transistor having source terminals connected to a first voltage terminal;
the first MOS transistor is having a drain terminal connected to the first data terminal;
the second MOS transistor having a drain terminal connected to the second data terminal;
the first MOS transistor having a gate terminal cross-connected to the drain terminal of the second MOS transistor;
the second MOS transistor having a gate terminal cross-connected to the drain terminal of the first MOS transistor;
a third MOS transistor and a fourth MOS transistor, the third MOS transistor and the fourth MOS transistor having floating gates and having a second conductivity type;
the third MOS transistor having a drain terminal connected to the first data terminal;
the fourth MOS transistor having a drain terminal connected to the second data terminal;
the third MOS transistor having a gate terminal cross-connected to the drain terminal of the fourth MOS transistor;
the fourth MOS transistor having a gate terminal cross-connected to the drain terminal of the third MOS transistor;
a fifth MOS transistor and a sixth MOS transistor having the second conductivity type;
the fifth MOS transistor and the sixth MOS transistor having source terminals connected to a second voltage terminal;
the fifth MOS transistor and the sixth MOS transistor having gate terminals connected to a first common switching line;
the fifth MOS transistor and the sixth MOS transistor having well terminals connected to a third common control line;
the fifth MOS transistor having a drain terminal connected to the source terminal of the third MOS transistor;
the sixth MOS transistor having a drain terminal connected to the source terminal of the fourth MOS transistor.

15 more elements

An electronic storage element comprising:

a first data terminal and a second data terminal;
a first transistor and a second transistor, the first transistor and the second transistor having a first conductivity type;
the first transistor and the second transistor having first terminals connected to a first voltage terminal;
the first transistor having a second terminal connected to the first data terminal;
the second transistor having a second terminal connected to the second data terminal;
the first transistor having a third terminal cross-connected to the second terminal of the second transistor;
the second transistor having a third terminal cross-connected to the second terminal of the first transistor;
a third transistor and a fourth transistor, the third transistor and the fourth transistor having floating gates, first terminals, and a second conductivity type;
the third transistor having a second terminal connected to the first data terminal;
the fourth transistor having a second terminal connected to the second data terminal;
the third transistor having a third terminal cross-connected to the second terminal of the fourth transistor;
the fourth transistor having a third terminal cross-connected to the second terminal of the third transistor;
a fifth transistor and a sixth transistor having the second conductivity type;
the fifth transistor and the sixth transistor having first and second terminals, the first terminals being connected to a second voltage terminal;
the fifth transistor and the sixth transistor having third terminals connected to a first common switching line;
the fifth transistor and the sixth transistor having well terminals connected to a third common control line;
the second terminal of the fifth transistor being connected to the first terminal of the third transistor;
and
the second terminal of the sixth transistor being connected to the first terminal of the fourth transistor.

16 more elements

Dependencies are inferred from the claim text.