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US 2008/0165580 A1Published application
3-level non-volatile semiconductor memory device and method of driving the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Tae PARK, Jung-Dal CHOI, Sung-Kyu JO
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Abstract
A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.
Claims7
A method of programming a non-volatile semiconductor memory device comprising:
- programming a first memory cell threshold voltage in response to a first data bit;
- programming one of the first memory cell threshold voltage and a second memory cell threshold voltage in response to a second data bit and the first memory cell threshold voltage;
- and
- programming one of the first memory cell threshold voltage and the second memory cell threshold voltage in response to a third data bit and the second memory cell threshold voltage.
1 more element
Dependencies are inferred from the claim text.