Programming method of multi-bit flash memory device for reducing programming error
AssigneeSamsung Electronics Co., Ltd.
InventorSeung-Jae Lee
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Abstract
A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.
Claims33
A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method comprising:
- selecting at least one of the memory cells to be programmed;
- and
- programming the at least one selected memory cell to a voltage higher than a verify voltage,
- wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.
A method of programming a multi-bit flash memory device including a memory cell having threshold voltage included in one of a plurality of voltage distribution states, the method comprising:
- programming the memory cell such that the threshold voltage thereof changes from an initial state;
- and
- verifying whether the threshold voltage has been programmed to a voltage higher than a verify voltage corresponding to a target state,
- wherein the verify voltage is one of threshold voltages included in the initial state or is higher than the threshold voltages included in the initial state.
A flash memory device, comprising:
- a plurality of memory cells having a threshold voltage corresponding to one of a plurality of states corresponding to multi-bit data;
- a page buffer block coupled to bit lines of the memory cells and configured to perform a read/program operation;
- a high voltage generator configured to provide a program voltage or a program verify voltage to a word line of selected memory cells;
- and
- a controller configured to control the high voltage generator or the page buffer block in order to verify whether a threshold voltage of the selected memory cells has been programmed from a first state to a second state among the plurality of states, during a program verify operation on one unit of the multi-bit data,
- wherein the program verify voltage is one of threshold voltages included in the first state or is higher than the threshold voltages included in the first state.
Dependencies are inferred from the claim text.