Method, Apparatus and Computer Program Product for Read Before Programming Process on Multiple Programmable Resistive Memory Cell
AssigneeMacronix International Co., Ltd.
InventorHsiang Lan Lung
Life of this patent
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Abstract
A method, system and computer program product for programming a plurality of programmable resistive memory cells is disclosed. The method comprises executing a first process to program input data, including setting up bias voltages on bit lines and word lines on the memory cells, determining if the input data for each memory cell corresponds to a set state and then setting such cells to a set state. The method further comprises executing a second process to program input data, determining if the input data for each memory cell corresponds to a reset state and then resetting such cells to a reset state.
Claims17
A method for programming a plurality of programmable resistive memory cells, comprising:
- (1) executing a first, set process to program input data in an input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the first process comprises the following (1) (a) determining and (1) (b) programming steps:
- (a) determining if the input data for each memory cell corresponds to a first, set state so that the memory cell needs to be set;
- and
- (b) for each memory cell needing to be set, programming the memory cell to a lower resistance, set state;
- and
- (2) executing a second, reset process to program input data in an input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the second process comprises the following (2) (c) determining and (2) (d) programming steps:
- (c) determining if the input data for each memory cell corresponds to a second, reset state so that the memory cell needs to be reset;
- and
- (d) for each memory cell needing to be reset, programming the memory cell to a higher resistance, reset state.
A programmable resistive memory system, comprising:
- a memory cell device comprising a plurality of programmable resistive memory cells;
- and
- a controller for programming the memory cell device, the controller configured for:
- (1) executing a first, set process to program input data in an input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the first process comprises the following (1) (a) determining and (1) (b) programming steps:
- (a) determining if the input data for each memory cell corresponds to a first, set state so that the memory cell needs to be set;
- and
- (b) for each memory cell needing to be set, programming the memory cell to a lower resistance, set state;
- and
- (2) executing a second, reset process to program input data in an input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the second process comprises the following (2) (c) determining and (2) (d) programming steps:
- (c) determining if the input data for each memory cell corresponds to a second, reset state so that the memory cell needs to be reset;
- and
- (d) for each memory cell needing to be reset, programming the memory cell to a higher resistance, reset state.
A computer program product including computer instructions for programming a memory cell device comprising a plurality of programmable resistive memory cells, the computer instructions including instructions for:
- (1) executing a first, set process to program input data in an input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the first process comprises the following (1) (a) determining and (1) (b) programming steps:
- (a) determining if the input data for each memory cell corresponds to a first, set state so that the memory cell needs to be set;
- and
- (b) for each memory cell needing to be set, programming the memory cell to a lower resistance, set state;
- and
- (2) executing a second, reset process to program input data in an input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the second process comprises the following (2) (c) determining and (2) (d) programming steps:
- (c) determining if the input data for each memory cell corresponds to a second, reset state so that the memory cell needs to be reset;
- and
- (d) for each memory cell needing to be reset, programming the memory cell to a higher resistance, reset state.
A method for programming a plurality of programmable resistive memory cells, comprising:
- (1) executing a first, set process to program input data in an input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the first process comprises the following (1) (a) determining and (1) (b) programming steps:
- (a) determining if the input data for each memory cell corresponds to a first, set state so that the memory cell needs to be set;
- and
- (b) for each memory cell needing to be set, programming the memory cell to a lower resistance, set state;
- and
- (2) for each memory cell not needing to be set, programming the memory cell to a higher resistance, reset state.
A method for programming a plurality of programmable resistive memory cells, comprising:
- (1) executing a first, reset process to program input data in input buffer, including setting up bias voltages on bit lines and word lines on each of the plurality of memory cells, wherein the first process comprises the following (1) (a) determining and (1) (b) programming steps:
- (a) determining if the input data for each memory cell corresponds to a second, reset state so that the memory cell needs to be reset;
- and
- (b) for each memory cell needing to be reset, programming the memory cell to a higher resistance, reset state;
- and
- (2) for each memory cell not needing to be reset, programming the memory cell to a lower resistance, set state.
Dependencies are inferred from the claim text.