Resistance Limited Phase Change Memory Material

A method of forming a memory cell, the method comprising the steps of:

• forming a first electrode and a second electrode;
• forming a composite material, the composite material electrically coupling the first electrode to the second electrode and comprising a phase change material and a resistor material;
• wherein at least a portion of the phase change material is operative to switch between a substantially crystalline phase and a substantially amorphous phase in response to an application of a switching signal to at least one of the first and second electrodes;
• and
• wherein the resistor material has a resistivity lower than that of the phase change material when the phase change material is in the substantially amorphous phase.

An integrated circuit comprising one or more memory cells, at least one of the one or more memory cells comprising:

• a first electrode and a second electrode;
• a composite material, the composite material electrically coupling the first electrode to the second electrode and comprising a phase change material and a resistor material;
• wherein at least a portion of the phase change material is operative to switch between a substantially crystalline phase and a substantially amorphous phase in response to an application of a switching signal to at least one of the first and second electrodes;
• and
• wherein the resistor material has a resistivity lower than that of the phase change material when the phase change material is in the substantially amorphous phase.