Non-volatile memory including sub cell array and method of writing data thereto
AssigneeSamsung Electronics Co., Ltd.
InventorsJoon-min PARK, Sang-beom KANG, Woo-yeong CHO, Hyung-rok OH
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Abstract
A non-volatile memory device, in which data values are determined by polarities at cell terminals, includes a memory cell array. The memory cell array is divided into multiple sub cell arrays, each sub cell array including at least one input/output line and an X-decoder/driver. First input/output lines included in different sub cell arrays may be simultaneously activated and bias voltages may be applied to the activated first input/output lines in accordance with the data values. The non-volatile memory device may be a bi-directional resistive random access memory (RRAM).
Claims20
A non-volatile memory device, in which data values are determined by polarities at cell terminals, the non-volatile memory device comprising:
- a memory cell array divided into a plurality of sub cell arrays, each sub cell array comprising at least one input/output line and an X-decoder/driver.
A method of writing data to a non-volatile memory device, in which data values are determined by polarities at cell terminals, the method comprising:
- simultaneously activating a plurality of first input/output lines included in different sub cell arrays and applying bias voltages to the activated first input/output lines in accordance with the data values;
- and
- activating a plurality of word lines included in the different sub cell arrays and applying bias voltages to the activated word lines in accordance with the data values.
Dependencies are inferred from the claim text.