Method and system for providing a nonvolatile content addressable memory using a single flotox element
AssigneeAtmel Corporation
InventorsBenoit Godard, Olivier Ginez, Jean Michel Daga
Life of this patent
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AssigneeAtmel Corporation
InventorsBenoit Godard, Olivier Ginez, Jean Michel Daga
Estimating the term…
A method and system for providing a content addressable memory cell (CAM) as well as the CAM are disclosed. In one aspect, the method and system include providing a plurality of memory cells, at least one search line and at least one match line. Each of the CAM cells includes a FLOating gate Tunnel OXide (FLOTOX) element. The FLOTOX element includes a single floating gate transistor and a high voltage select transistor and can store at least a portion of a data word. Each CAM cell also preferably includes at least one low voltage transistor capable of comparing the portion of data word stored in the FLOTOX element with the portion of searched word. The search line(s) provide search word(s). The comparator(s) are connected with the search line(s) and the memory cells. The comparator(s) compare the data word stored by the portion of the plurality of memory cells and the search word. The match line(s) indicate whether the search word matches the data word stored by the portion of the plurality of memory cells.
A content addressable memory (CAM) cell comprising:
A content addressable memory (CAM) comprising:
A content addressable memory (CAM) comprising:
A semiconductor device comprising:
A method for providing a content addressable memory (CAM) comprising:
Dependencies are inferred from the claim text.