Magnetic random access memory and write method of the same
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi KAJIYAMA
Life of this patent
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Abstract
A magnetic random access memory includes a magnetoresistive effect element which includes a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, and in which the magnetization directions in the fixed layer and the recording layer take one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer, and a yoke layer which concentrates a magnetic field generated by the electric current, and causes the magnetic field to act on magnetization in the recording layer.
Claims20
A magnetic random access memory comprising:
- a magnetoresistive effect element which includes a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, and in which the magnetization directions in the fixed layer and the recording layer take one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer;
- and
- a yoke layer which concentrates a magnetic field generated by the electric current, and causes the magnetic field to act on magnetization in the recording layer.
A write method of a magnetic random access memory comprising:
- a magnetoresistive effect element which includes a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, and in which the magnetization directions in the fixed layer and the recording layer take one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer;
- and
- a yoke layer surrounding a circumferential surface of the magnetoresistive effect element,
- wherein when the electric current is supplied between the fixed layer and the recording layer in a write operation, a magnetic field generated by the electric current concentrates to the yoke layer and acts on the recording layer, and spin-polarized electrons generated by the electric current also acts on the recording layer.
A magnetic random access memory comprising:
- a magnetoresistive effect element which includes a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, and in which the magnetization directions in the fixed layer and the recording layer take one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer;
- and
- an insulating film which concentrates a magnetic field generated by the electric current, causes the magnetic field to act on magnetization in the recording layer and has permeability.
Dependencies are inferred from the claim text.