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US 2008/0164949 A1Published application
Wideband linearization and adaptive power management for microwave power amplifiers
AssigneeCity University of Hong Kong
InventorsKwok Wai Lau, Quan Xue
Life of this patent
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Abstract
A power amplifier includes a bipolar transistor and a self-adaptive bias network situated between an RF input and the base of the bipolar transistor. The self-adaptive bias network suppresses the low frequency even-order intermodulation components. The self-adaptive bias network stabilizes a DC bias voltage to provide a substantially constant base-emitter voltage and provides an increased DC base current with increased input power when the power amplifier is operating within the nonlinear region.
Claims7
A power amplifier, comprising:
- an amplifying transistor including a base;
- and
- a self-adaptive bias network situated between an RF input and the base of said amplifying transistor, wherein said self-adaptive bias network suppresses low frequency even-order intermodulation components.
Dependencies are inferred from the claim text.