Method for testing semiconductor memory device using probe and semiconductor memory device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-hun Seo, Won-kyung Chung, Han-na Park
Life of this patent
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Abstract
Example embodiments relate to a semiconductor memory device including a first pad having a probe region and a sensing region, the first pad may be adapted to come in contact with a primary probe, a sensing unit adapted to sense a weak contact of the first pad and the primary probe, the sensing unit may generate an output current in response to a contact point of the primary probe, and a second pad may be adapted to come in contact with a secondary probe to input/output an electric signal. The output current of the sensing unit may be output through the second pad or the secondary probe.
Claims25
A semiconductor memory device, comprising:
- a first pad having a probe region and a sensing region, the first pad adapted to come in contact with a primary probe;
- a sensing unit adapted to sense a weak contact of the first pad and the primary probe, the sensing unit generating an output current in response to a contact point of the primary probe;
- and
- a second pad adapted to come in contact with a secondary probe to input/output an electric signal,
- wherein the output current of the sensing unit is output through the second pad or the secondary probe.
A method for testing probe contact with a semiconductor memory device having a plurality of pads, comprising:
- applying a voltage to a primary probe coming into contact with a first pad;
- generating an output current in response to a contact point of the primary probe;
- outputting the output current through a second pad or a secondary probe coming into contact with the second pad;
- and
- determining whether a weak contact exists between the primary probe and the first pad based on the output current.
Dependencies are inferred from the claim text.