Methods and Apparatus for Characterizing Magnetic Tunnel Junctions Having Two Dielectric Layers
AssigneeInternational Business Machines Corporation
InventorDaniel Worledge
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Abstract
A method of electrically characterizing a magnetic tunnel junction film stack having three metal layers separated by two dielectric layers comprises three steps. In a first step, four or more probes are electrically coupled to a surface of the magnetic tunnel junction film stack. In a second step, electrical resistance is determined with the four or more probes for each of a plurality of spacings between the probes. Finally, in a third step, the plurality of resistance measurements are fitted with one or more equations that relate electrical resistance to probe spacing.
Claims20
A method of electrically characterizing a magnetic tunnel junction film stack having three metal layers separated by two dielectric layers, the method comprising the steps of:
- electrically coupling four or more probes to a surface of the magnetic tunnel junction film stack;
- determining electrical resistance with the four or more probes for each of a plurality of spacings between the probes;
- and
- fitting the plurality of resistance measurements with one or more equations that relate electrical resistance to probe spacing.
A method of determining whether a magnetic tunnel junction film stack has three metal layers separated by two dielectric layers, the method comprising the steps of:
- electrically coupling four or more probes to a surface of the magnetic tunnel junction film stack;
- determining electrical resistance with the four or more probes for each of a plurality of spacings between the probes;
- and
- fitting the plurality of resistance measurements with one or more equations that relate electrical resistance to probe spacing.
An apparatus for characterizing a magnetic tunnel junction film stack having three metal layers separated by two dielectric layers, the apparatus comprising:
- a probe portion, the probe portion operative to electrically couple four or more probes to a surface of the magnetic tunnel junction film stack;
- a resistor portion, the resistor portion operative to determine electrical resistance with the four or more probes for each of a plurality of spacings between the probes;
- and
- a processor portion, the processor portion operative to fit the plurality of resistance measurements with one or more equations that relate electrical resistance to probe spacing.
Dependencies are inferred from the claim text.