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US 2008/0164819 A1Published application
Semiconductor apparatus using ion beam
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Wook Hwang, Yung Hee Yvette Lee, Chul-Ho Shin, Jin-Seok Lee
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Abstract
Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.
Claims14
A semiconductor apparatus comprising:
- a plasma chamber including a wall portion to which a reference voltage is applied and an inner space in which plasma is generated;
- and
- a plurality of grids adjacent to the plasma chamber inducing ion beams from the plasma, wherein
- each of the grids includes a plurality of induction holes through which the ion beams pass,
- a voltage having the same potential level as that of the reference voltage applied to a first grid, and
- a voltage having a potential level different from that of the reference voltage applied to a last grid;
- wherein
- the first grid is the grid closest to the plasma, and the last grid is the grid farthest from the plasma.
5 more elements
Dependencies are inferred from the claim text.