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AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshiki Nishibayashi, Akihiko Uedo, Yoshiyuki Yamamoto, Takahiro Imai
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An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are used in electron beam and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and electronic devices that uses such electron emission cathode and electron emission source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode being in a columnar form having a sharpened acute section in one place of an electron emitting portion and being constituted by at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is a n-type semiconductor comprising n-type impurities at 2×1015 cm−3 or higher, the other type is a p-type semiconductor comprising p-type impurities at 2×1015 cm−3 or higher, the p-type semiconductor and the n-type semiconductor are joined, an electric potential that is negative with respect to the p-type semiconductor is applied with a pair of current introducing terminals to the n-type semiconductor so that electrons flow from the n-type semiconductor to the p-type semiconductor, and the n-type semiconductor has a component in which electrons flow to the electron emitting portion.
A diamond electron emission cathode having single crystal diamond in at least part thereof, wherein said diamond electron emission cathode is in a columnar form comprising a sharpened acute section having one electron emitting portion as an apex therein and is constituted by at least two types of semiconductors that differ in electric properties, one of the types constituting said semiconductors is an n-type semiconductor comprising n-type impurities at 2×1015 cm−3 or higher, the other type is a p-type semiconductor comprising p-type impurities at 2×1015 cm−3 or higher, said p-type semiconductor and said n-type semiconductor are joined directly or indirectly via a layer of another type, an electric potential that is negative with respect to said p-type semiconductor is applied with a pair of current introducing terminals to said n-type semiconductor so that electrons flow from said n-type semiconductor to said p-type semiconductor, and a joining interface of the p-type semiconductor and n-type semiconductor is positioned close to the electron emitting portion.
A diamond electron emission cathode having single crystal diamond in at least part thereof, wherein said diamond electron emission cathode is in a columnar form comprising a sharpened acute section having one electron emitting portion as an apex therein and is constituted by at least two types of semiconductors that differ in electric properties, one of the types constituting said semiconductors is an n-type semiconductor comprising n-type impurities at 2×1015 cm−3 or higher, the other type is a p-type semiconductor comprising p-type impurities at 2×10−3 cm−3 or higher, said p-type semiconductor and said n-type semiconductor are joined directly or indirectly via a layer of another type, an electric potential that is positive with respect to said p-type semiconductor is applied with a pair of current introducing terminals to said n-type semiconductor so that electrons flow from said p-type semiconductor to said n-type semiconductor, and a joining interface of the p-type semiconductor and n-type semiconductor is positioned close to the electron emitting portion.
Dependencies are inferred from the claim text.