Wafer, semiconductor device, and fabrication methods therefor

Abstract

In order to fabricate a semiconductor device that can perform at its full capacity, in which (i) a single-crystal silicon integrated circuit is formed on an insulating substrate without an adhesive agent, and (ii) an active region of the single-crystal integrated circuit is not damaged by implantation of hydrogen ions, (a) the single-crystal silicon integrated circuit is formed on the insulating substrate, and (b) the single-crystal silicon integrated circuit is surrounded by an oxide (buried oxide layer made of silicon dioxide).

Dependencies are inferred from the claim text.