Highly conductive composition for wafer coating
AssigneeNational Starch and Chemical Investment Holding Corporation
InventorQizhuo Zhuo
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Abstract
A conductive composition for coating a semiconductor wafer comprises conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns, a first resin that has a softening point between 80-260° C., solvent, curing agent, and a second resin, wherein at room temperature the first resin is substantially soluble in the solvent.
Claims13
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A semiconductor wafer having a front side that is active and a back side that is opposed to the front side that is inactive wherein the back side of the semiconductor wafer is coated with a conductive composition comprising:
- a) 66 to 80 wt% conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 5 microns,
- b) 5 to 25 wt% first resin that has a softening point between 80-260° C.,
- c) 5 to 25 wt% solvent,
- d) 0 to 5 wt% curing agent, and
- e) 0 to 20 wt% second resin,
- wherein at room temperature the first resin is substantially soluble in the solvent.
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Dependencies are inferred from the claim text.